HIGH POWER PSEUDOMORPHIC GALLIUM ARSENIDE HIGH ELECTRON MOBILITY TRANSISTORS
Assignee
TRW INC. A CORP. OF OHIO
Filed
Aug 1, 1991
Granted
Nov 16, 1993
Location
Redondo Beach CA (TRW)
Abstract
A high power pseudomorphic (PM) AlGaAs/InGaAs high electron mobility transistor (HEMT) (26) with improved gain at 94 GHz. The transistor (26) includes an InGaAs quantum well (32) having a silicon planar doping layer (34) located at the bottom. A donor layer (36) comprises AlGaAs with a silicon planar doping layer (37). The resulting transistor (26) exhibits superior gain and noise characteristics that relatively high power levels when operating at 94 GHz. The transistor (26) is produced using an optimized growth process which involves growing the quantum well at a relatively low temperature and then raising the temperature to grow subsequent layers.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Mar 17, 1992
Rescinded
Mar 26, 1993
Duration
1 year
Inventor
- 1DWIGHT C. STREIT
Sensitive facility: Redondo Beach CA (TRW)
Record Details
- Patent number
- US 5262660
- Application
- 07739046
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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