INTEGRATED CIRCUIT METALLIZATION WITH SUPERCONDUCTOR BEOL WIRING
Assignee
TOSHIBA CORP.
Filed
Feb 17, 1998
Granted
Jul 11, 2000
Location
MERIDIAN ID US
Abstract
The present invention discloses an integrated circuit that is wired with a high-temperature superconductive material that is superconductive at temperatures of about 70° K and above, and methods of making the integrated circuit. The front-end manufactured semiconductor structure is patterned with a preferred precursor metal or metal oxide and a complementary compound is superposed and reacted to form wiring lines of superconductor ceramics that complete integrated circuits within the front-end manufactured semiconductor structure. The front-end manufactured semiconductor structure is alternatively patterned first with the complementary compound and the precursor metal is thinly patterned by ion implantation. The front-end manufactured semiconductor structure is then treated to form wiring lines of superconductor ceramics that complete integrated circuits within structure. The conductive lines, if formed within an oxidized portion of the complementary compound, are self-insulating by the presence of the oxided complementary compound. Operation of the devices is accomplished at "high" superconductive temperatures that cause improved solid state operation of the device, minimizing molecular vibrations and dislocation effects, and cause the wiring to be superconductive.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Aug 19, 1998
Rescinded
Sep 4, 1998
Duration
16 days
Inventor
- 1JOHN H. GIVENS
Record Details
- Patent number
- US 6087711
- Application
- 09024234
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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