Research/Patents/US 4996579
US 4996579Tier 3 — General Defense

DESIGN FOR ELECTRONIC SPECTRALLY TUNABLE INFRARED DETECTOR

Assignee

US Government

Filed as: UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY, THE

Filed

Feb 4, 1983

Granted

Feb 26, 1991

Location

Bethesda MD (defense contractors)

Abstract

A single element infrared detector consisting of multiple layers of succeve epilayers of lead chalcogenides or their alloys with tin or cadmium to form two or more adjacent contiguous surfaces whereupon each surface is deposited with an ohmic contact. The multiple adjacent semiconductor surfaces are also each fitted or equipped with an non-ohmic contact that yields novel applications in terms of broad band and narrow scanning, particular when the epilayers are geometrically arranged to selectively allow the transmission of radiation to yield both broad band and narrow band responses concurrently so as to obtain a separate electrical signal from each adjacent contiguous semiconducting epilayer surface.

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Jun 16, 1983

Rescinded

Jul 12, 1990

Duration

7 years

Inventor

  • 1TAK-KIN CHU

Sensitive facility: Bethesda MD (defense contractors)

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Back to patent indexSource: USPTO 35 USC §181 secrecy order records