DESIGN FOR ELECTRONIC SPECTRALLY TUNABLE INFRARED DETECTOR
Assignee
US Government
Filed as: UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY, THE
Filed
Feb 4, 1983
Granted
Feb 26, 1991
Location
Bethesda MD (defense contractors)
Abstract
A single element infrared detector consisting of multiple layers of succeve epilayers of lead chalcogenides or their alloys with tin or cadmium to form two or more adjacent contiguous surfaces whereupon each surface is deposited with an ohmic contact. The multiple adjacent semiconductor surfaces are also each fitted or equipped with an non-ohmic contact that yields novel applications in terms of broad band and narrow scanning, particular when the epilayers are geometrically arranged to selectively allow the transmission of radiation to yield both broad band and narrow band responses concurrently so as to obtain a separate electrical signal from each adjacent contiguous semiconducting epilayer surface.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Jun 16, 1983
Rescinded
Jul 12, 1990
Duration
7 years
Inventor
- 1TAK-KIN CHU
Sensitive facility: Bethesda MD (defense contractors)
Record Details
- Patent number
- US 4996579
- Application
- 00064641
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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