FOR FORMING AN INTEGRATED CIRCUIT
Assignee
MOTOROA, INC.
Filed
Mar 4, 1986
Granted
Jul 11, 2000
Location
PFLUGERVILLE TX US
Abstract
A process for selectively plasma etching polycrystalline silicon or polysilicon in preference to silicon dioxide which minimizes the detrimental effect of carbon. It has been discovered that carbon from the plasma etch chemicals or from photoresist present interferes disadvantageously with the selective plasma etch of polysilicon as opposed to silicon dioxide. By heat treating and deep ultraviolet light treating the photoresist prior to the plasma etch step and by using non-carbon etch chemicals, this detrimental carbon effect can be reduced.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Dec 12, 1986
Rescinded
Mar 29, 1993
Duration
6 years, 3 months
Inventor
- 1JASPER W. DOCKREY
Record Details
- Patent number
- US 6087267
- Application
- 06836048
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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