INTRACAVITY QUANTUM WELL PHOTODETECTOR INTEGRATED WITHIN A VERTICAL-CAVITY SURFACE-EMITTING LASER AND METHOD OF OPERATING SAME
Assignee
CALIFORNIA, UNIVERSITY OF, THE, REGENTS OF, THE
Filed
Oct 16, 1996
Granted
May 26, 1998
Location
SACRAMENTO CA US
Abstract
A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Jun 27, 1997
Rescinded
Jul 15, 1997
Duration
18 days
Inventor
- 1SUI F. LIM
Technology Domains
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Record Details
- Patent number
- US 5757837
- Application
- 08731527
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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