Research/Patents/US 5757837
US 5757837

INTRACAVITY QUANTUM WELL PHOTODETECTOR INTEGRATED WITHIN A VERTICAL-CAVITY SURFACE-EMITTING LASER AND METHOD OF OPERATING SAME

Assignee

CALIFORNIA, UNIVERSITY OF, THE, REGENTS OF, THE

Filed

Oct 16, 1996

Granted

May 26, 1998

Location

SACRAMENTO CA US

Abstract

A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers.

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Jun 27, 1997

Rescinded

Jul 15, 1997

Duration

18 days

Inventor

  • 1SUI F. LIM

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Back to patent indexSource: USPTO 35 USC §181 secrecy order records