DEPLETION MODE POWER MOSFET WITH REFRACTORY GATE AND METHOD OF MAKING SAME

Abstract

A depletion mode power MOSFET has a gate electrode formed of material that is refractory, or resistant, to high temperature encountered during device fabrication. A depletion channel region which is formed in a base region of a MOSFET and which interconnects the source and drain regions is formed after a high temperature drive to form the base region, but before a gate oxide and gate and source electrodes are formed at lower temperatures. The depletion channel region is thus subjected to reduced temperatures and grows only slightly in thickness, so that it can be easily depleted. The gate oxide, similarly, is subjected to reduced temperatures, and, particularly when made thin, exhibits high insensitivity to radiation exposure.

Source: Google Patents

35 USC §181 Secrecy Order

Inventor

• 1DANIEL M. KINZER

Sensitive facility: El Segundo CA (Aerospace Corp/TRW)