Research/Patents/US 5454902
US 5454902Tier 1 — UAP Program Assignee

PRODUCTION OF CLEAN, WELL-ORDERED CDTE SURFACES USING LASER ABLATION

Assignee

Hughes Aircraft

Filed as: HUGHES AIRCRAFT COMPANY

Filed

Sep 24, 1992

Granted

Oct 3, 1995

Location

CALABASAS CA US

Abstract

Chemically-etched and or sputtered CdTe surfaces are exposed to UV excimer laser radiation at a fluence ranging from about 15 to 75 mJ/cm2, followed by either a low temperature (<300° C.) thermal anneal or exposure of the CdTe surface to UV excimer laser radiation at a fluence lower than the threshold fluence. This procedure provides clean, stoichiometric, and well-ordered CdTe surfaces.

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Apr 16, 1993

Rescinded

Nov 8, 1993

Duration

6 months

Inventor

  • 1JENNIFER J. ZINCK

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Back to patent indexSource: USPTO 35 USC §181 secrecy order records