MICROWAVE HETEROJUNCTION BIPOLAR TRANSISTORS SUITABLE FOR LOW-POWER, LOW-NOISE AND HIGH-POWER APPLICATIONS AND METHOD FOR FABRICATING SAME
Assignee
TEXAS INSTRUMENTS INCORPORATED
Filed
Jul 31, 1991
Granted
Aug 29, 1995
Location
PLANO TX US
Abstract
Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter 108, a base 126 and a collector 24 is disclosed, wherein the base 126 is composed of one or more islands 126 of semiconductor material. The one or more islands 126 are formed so that they do not cross any boundaries of the active area 60 of the transistor. Other devices, systems and methods are also disclosed.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Mar 27, 1992
Rescinded
Jul 17, 1992
Duration
3 months
Inventor
- 1BURHAN BAYRAKTAROGLU
Record Details
- Patent number
- US 5446294
- Application
- 07738691
- Aerospace match
- No
- Dataset source
- 35 USC §181 SO records
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