THERMAL/MECHNICAL BUFFER FOR HGCDTE/SI DIRECT HYBRIDIZATION
Assignee
SANTA BARBARA RESEARCH CENTER, A CORP. OF CA
Filed
Aug 2, 1988
Granted
Nov 15, 1994
Location
SANTA BARBARA CA US
Abstract
A Group II-VI photodetector array 12 is coupled to a silicon readout circuit 14 by means of a thermal/mechanical buffer 16 comprised of a body of material which has a characteristic thermal expansivity which is more similar to that of the thermal expansivity of the Group II-VI material than that of silicon. One suitable material is Al2 O3. The buffer has a plurality of conductive vias 18 formed therethrough, each of the conductive vias being "bumped" at opposite ends thereof. The buffer accommodates the differing expansivities of, for example, HgCdTe and silicon, thereby relieving thermally generated stresses with a consequent improvement in the reliability of the resulting hybrid structure.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Mar 27, 1989
Rescinded
Feb 22, 1994
Duration
4 years, 11 months
Inventor
- 1JAMES M. MYROSZNYK
Record Details
- Patent number
- US 5365088
- Application
- 07227581
- Aerospace match
- No
- Dataset source
- 35 USC §181 SO records