METHOD FOR LASER-ASSISTED ETCHING OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS USING CHLOROFLUOROCARBON AMBIENTS
Assignee
US Government
Filed as: UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE SECRETARY OF THE NAVY
Filed
Apr 10, 1990
Granted
Oct 11, 1994
Location
San Diego CA (SAIC/General Dynamics)
Abstract
An etching process allows a selective single-step patterning of III-V or II-VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Jul 6, 1990
Rescinded
Apr 23, 1993
Duration
2 years, 9 months
Inventor
- 1STEPHEN D. RUSSELL
Sensitive facility: San Diego CA (SAIC/General Dynamics)
Record Details
- Patent number
- US 5354420
- Application
- 07508317
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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