US 5338693
PROCESS FOR MANUFACTURE OF RADIATION RESISTANT POWER MOSFET AND RADIATION RESISTANT POWER MOSFET
Assignee
INTERNATIONAL RECTIFIER CORPORATION A CORP OF DE
Filed
Jan 8, 1987
Granted
Aug 16, 1994
Location
RIVERSIDE CA US
Abstract
A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. Arsenic doping is used in the early part of the process to form the source region, and diffused too slowly to be adversely affected by later thermal cycling process steps. The source region has a relatively high resistance to act as a ballasting resistor to prevent burnout of one of a large number of parallel connected cells.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Sep 22, 1987
Rescinded
May 26, 1993
Duration
5 years, 8 months
Inventor
- 1DANIEL M. KINZER
Record Details
- Patent number
- US 5338693
- Application
- 07001629
- Aerospace match
- No
- Dataset source
- 35 USC §181 SO records
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INTERNATIONAL RECTIFIER CORPORATION A CORP OF DEBack to patent indexSource: USPTO 35 USC §181 secrecy order records