US 5305255
NON-DESTRUCTIVE READOUT FERROELECTRIC MEMORY CELL
Assignee
RAYTHEON COMPANY, A CORP. OF DE
Filed
Dec 18, 1989
Granted
Apr 19, 1994
Location
SHARON MA US
Abstract
A non-volatile ferroelectric memory with very slight disruption of the memory contents during a read operation. The ferroelectric capacitors are connected to the row and column control lines through transistor switches. Control logic senses the level of current flowing into the ferroelectric capacitor during a read operation. If the current flow exceeds a threshold, the transistor switches are activated to reverse the polarity of the voltage applied to the ferroelectric capacitor.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Aug 6, 1990
Rescinded
Oct 4, 1993
Duration
3 years, 2 months
Inventor
- 1TZVI RUBINSTEIN
Record Details
- Patent number
- US 5305255
- Application
- 00074517
- Aerospace match
- No
- Dataset source
- 35 USC §181 SO records
Browse by Assignee
RAYTHEON COMPANY, A CORP. OF DEBack to patent indexSource: USPTO 35 USC §181 secrecy order records