SELF-ALIGNED GALLIUM ARSENIDE/ALUMINUM GALLIUM ARSENIDE COLLECTOR-UP HETEROJUNCTION BIPOLAR TRANSISTORS CAPABLE OF MICROWAVE APPLICATIONS AND METHOD
Assignee
Rockwell International
Filed as: ROCKWELL INTERNATIONAL CORPORATION
Filed
May 13, 1991
Granted
Nov 30, 1993
Location
THOUSAND OAKS CA US
Abstract
A C-up HBT is made to operate in the microwave/millimeter frequency range by self-aligning the collector uprisers on the base relative to proton damaged emitter regions and the base contacts which minimizes carrier injection into the extrinsic base. The use of about 7-10% indium in the indium gallium arsenide base is sufficient to stop the FREON-12 etch at the base after totally etching through the collector and single self-aligning mask.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Mar 17, 1992
Rescinded
Mar 26, 1993
Duration
1 year
Inventor
- 1MAU CHUNG F. CHANG
Record Details
- Patent number
- US 5266819
- Application
- 07700367
- Aerospace match
- No
- Dataset source
- 35 USC §181 SO records
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