INFRARED STARING IMAGING ARRAY

Assignee

NORTHROP CORPORATION, LOS ANGELES, CALIFORNIA, A CORP. OF DE

Filed

Aug 1, 1988

Granted

Dec 15, 1992

Location

PALOS VERDES ES CA US

Abstract

Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic ranges and greater wafer yield compared to previous designs. The devices are fabricated to include a substrate (15) having a field oxide (16) pattern thereon. A first gate oxide (17) is deposited over the field oxide with columns (21) patterned on the first gate oxide. A second gate oxide (19) is next deposited with rows (22) patterned on the second gate oxide. The devices can further include a passivation layer (29) deposited on the rows (22).

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Apr 13, 1989

Rescinded

Never rescinded

Duration

37y 2mo — still active

This secrecy order has no recorded rescission date in USPTO records. The order may still be legally in force, or rescission data may not be publicly available.