US 5168069
ULTRA-HIGH-SPEED PHOTOCONDUCTIVE DEVICES USING SEMI-INSULATING LAYERS
Assignee
MASSACHUSETTS INSTITUTE OF TECHNOLOGY, A CORP. OF MA
Filed
Feb 17, 1989
Granted
Dec 1, 1992
Location
Cambridge MA (Draper Lab/MIT)
Abstract
An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150 DEG to about 300 DEG C.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Jun 30, 1989
Rescinded
Nov 29, 1989
Duration
5 months
Inventor
- 1FRANK W. SMITH
Sensitive facility: Cambridge MA (Draper Lab/MIT)
Record Details
- Patent number
- US 5168069
- Application
- 07312133
- Aerospace match
- No
- Dataset source
- 35 USC §181 SO records
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MASSACHUSETTS INSTITUTE OF TECHNOLOGY, A CORP. OF MABack to patent indexSource: USPTO 35 USC §181 secrecy order records