Research/Patents/US 5167881
US 5167881

PREPARATION OF SUBSTANTIALLY POLYCRYSTALLINE SILICON CARBIDE FIBERS FROM POLYORGANOSILOXANES

Assignee

Filed

Jan 31, 1991

Granted

Dec 1, 1992

Location

MIDLAND MI US

Abstract

A process for the preparation of substantially polycrystalline silicon carbide fibers are provided. The fibers may be fabricated to have a small diameter and are thermally stable at high temperature. The process is carried out by initially forming fibers from a preceramic polymeric precursor comprising phenyl-containing polyorganosiloxane resins. The fibers are then infusibilized to render them nonmelting followed by a pyrolysis step in which the fibers are heated to a temperature in excess of 1600° C. in a nonoxidizing atmosphere to form substantially polycrystalline silicon carbide fibers. The substantially polycrystalline silicon carbide fibers which are formed have at least 75% crystallinity and have a density of at least about 2.9 gm/cm3. The polymeric precursor or the fibers contain, or have incorporated therein, at least about 0.2 % by weight boron. This incorporation of boron may be accomplished either prior to or during formation of the fibers or during at least one of the infusibilizing or pyrolyzing steps of the process.

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Oct 15, 1991

Rescinded

Jan 28, 1992

Duration

3 months

Inventor

  • 1WILLIAM H. ATWELL
Back to patent indexSource: USPTO 35 USC §181 secrecy order records