Research/Patents/US 5130259
US 5130259

INFRARED STARING IMAGING ARRAY AND METHOD OF MANUFACTURE

Assignee

NORTHROP CORPORATION, A CORP. OF DE

Filed

Aug 1, 1988

Granted

Jul 14, 1992

Location

PALOS VERDES ES CA US

Abstract

Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic ranges and greater wafer yield compared to previous designs. The devices are fabricated to include a substrate (15) having a field oxide (16) pattern thereon. A first gate oxide (17) is deposited over the field oxide with columns (21) patterned on the first gate oxide. A second gate oxide (19) is next deposited with rows (22) patterned on the second gate oxide. The devices can further include a passivation layer (29) deposited on the rows (22).

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Mar 17, 1989

Rescinded

Dec 27, 1991

Duration

2 years, 9 months

Inventor

  • 1ALI BAHRAMAN

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Back to patent indexSource: USPTO 35 USC §181 secrecy order records