INFRARED STARING IMAGING ARRAY AND METHOD OF MANUFACTURE
Assignee
NORTHROP CORPORATION, A CORP. OF DE
Filed
Aug 1, 1988
Granted
Jul 14, 1992
Location
PALOS VERDES ES CA US
Abstract
Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic ranges and greater wafer yield compared to previous designs. The devices are fabricated to include a substrate (15) having a field oxide (16) pattern thereon. A first gate oxide (17) is deposited over the field oxide with columns (21) patterned on the first gate oxide. A second gate oxide (19) is next deposited with rows (22) patterned on the second gate oxide. The devices can further include a passivation layer (29) deposited on the rows (22).
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Mar 17, 1989
Rescinded
Dec 27, 1991
Duration
2 years, 9 months
Inventor
- 1ALI BAHRAMAN
Record Details
- Patent number
- US 5130259
- Application
- 07226501
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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