SEMICONDUCTOR LASER WITH ADJUSTABLE LIGHT BEAM

Abstract

A laser device includes a substrate of semiconductor material having a major surface and a pair of opposed side surfaces. A plurality of laser elements are on the major surface of the substrate and are arranged in a plurality of spaced rows. Each laser element has an active region in which radiation is generated and which extends substantially parallel to the major surface of the substrate and between the side surfaces. Each row can contain either a single laser element or a plurality of laser elements which are optically coupled along the row. A waveguide extends from each end of each row of laser elements toward an adjacent side surface of the substrate. The waveguides are optically coupled to optically couple the laser elements in the rows in series so as to injection lock in phase the laser elements. Means are provided for emitting the radiation from one of the surfaces of the substrate. The radiation may be emitted from the waveguides at one of the side surfaces or reflectors may be provided on the major surface adjacent the laser elements for emitting beams of radiation from the major surface. Phase shifters are provided adjacent the laser elements for adjusting the phase of the radiation generated in the laser elements and thereby adjust in the far field the interference pattern formed by the emitted beams of radiation.

Source: Google Patents

35 USC §181 Secrecy Order

Inventor

• 1JACOB M. HAMMER

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