PHOTODIODE
Assignee
BELL TELEPHONE LABORATORIES, INCORPORATED; AMERICAN TELEPHONE AND TELEGRAPH COMPANY
Filed
Aug 18, 1989
Granted
Mar 12, 1991
Location
FAIR HAVEN NJ US
Abstract
In this invention, there is disclosed a new photodiode which comprises a semimetal/semiconductor junction. Distortion of the bands associated with this type of junction result in current flow when an electron hole pair is formed by, for example, a photon impinging upon the junction. The photodiode operates in the photovoltaic mode. However, rather than relying on impurity doping to fabricate a p-n junction, the semimetallic nature of HgTe and its large conduction band offsets with Hg1-x Cdx Te are used to create a rectifying Schottky like structure.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Apr 9, 1990
Rescinded
Jul 31, 1990
Duration
3 months
Inventor
- 1RICHARD F. AUSTIN
Record Details
- Patent number
- US 4999694
- Application
- 07395922
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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