ENCHANCED CROSSITE RANDOM ACCESS MEMORY ELEMENT AND A PROCESS FOR THE FABRICATION THEREOF

Abstract

An enhanced random access memory element and a process for its fabrication,herein permalloy thin films are patterned, inter alia, into a plurality of geminous memory cells to form a matrix or array of juxtaposed sloped columns thereof is disclosed. Each of the geminous memory cells is configured into a unique pattern comprising twin sub-patterns joined in an opposite fashion, i.e. reversed and inversed, so as to share a common area of permalloy. Consequently, magnetic domain walls (Neel walls) are formed at opposite and adjacent apexes of the unique pattern parallel to the easy axis after a predetermined magnetic field is applied along the hard axis of the array of geminous memory cells and then reduced to zero. In this way, the magnetization is properly aligned for use of the array of geminous memory cells as an enhanced nonvolatile random access memory element. Subsequent magnetization of the proper amount at particular ones of the geminous memory cells will cause two crossties and two Bloch lines to form therein so as to couple to each other, crosstie to Bloch line, Bloch line to crosstie. This configuration provides a larger readout signal, a larger signal to noise ratio, and will operate at lower power levels for the same density of information than previous crosstie random access memory elements.

Source: Google Patents

35 USC §181 Secrecy Order

Inventor

• 1LEONARD J. SCHWEE

Sensitive facility: Arlington VA (defense contractors)

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