Research/Patents/US 4902985
US 4902985Tier 1 — UAP Program Assignee

MICROWAVE REFLECTION AMPLIFIERS HAVING INCREASED BANDWIDTH

Assignee

Raytheon

Filed as: RAYTHEON COMPANY, A CORP. OF DE.

Filed

Feb 25, 1988

Granted

Feb 20, 1990

Location

MILFORD MA US

Abstract

A four diode reflection amplifier having a relatively wide bandwidth of at least 5 percent over the frequency range of 43.5 to 45.5 GHz includes three magic Ts arranged to provide a 4-way passive power combiner. The 4-way passive power combiner symmetrically couples each of the four diode amplifiers to an input/output port of the reflection amplifier. To provide the improved bandwidth performance, a perturbation impedance in the form of a single shunt capacitance is inserted at the input/output port of the reflection amplifier to provide a selected perturbation in the load impedance and hence the reflection characteristic seen by the reflection amplifier over a selected band of operation of the amplifier.

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Jun 24, 1988

Rescinded

Jun 9, 1989

Duration

11 months

Inventor

  • 1THOMAS K. ARTHUR
Back to patent indexSource: USPTO 35 USC §181 secrecy order records