MICROWAVE REFLECTION AMPLIFIERS HAVING INCREASED BANDWIDTH
Assignee
Raytheon
Filed as: RAYTHEON COMPANY, A CORP. OF DE.
Filed
Feb 25, 1988
Granted
Feb 20, 1990
Location
MILFORD MA US
Abstract
A four diode reflection amplifier having a relatively wide bandwidth of at least 5 percent over the frequency range of 43.5 to 45.5 GHz includes three magic Ts arranged to provide a 4-way passive power combiner. The 4-way passive power combiner symmetrically couples each of the four diode amplifiers to an input/output port of the reflection amplifier. To provide the improved bandwidth performance, a perturbation impedance in the form of a single shunt capacitance is inserted at the input/output port of the reflection amplifier to provide a selected perturbation in the load impedance and hence the reflection characteristic seen by the reflection amplifier over a selected band of operation of the amplifier.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Jun 24, 1988
Rescinded
Jun 9, 1989
Duration
11 months
Inventor
- 1THOMAS K. ARTHUR
Record Details
- Patent number
- US 4902985
- Application
- 07160546
- Aerospace match
- No
- Dataset source
- 35 USC §181 SO records
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