CLOSE SPACE EPITAXY PROCESS

Abstract

A process of high pressure close-space epitaxy in the semi-confined atmosre of a reusable demountable ampule in a furnace growth chamber. The ampule has a substrate and source materials placed therein whereupon the ampule is then loaded in the pressure furnace and the furnace is sealed air tight. Alternate steps of high pressure gas scrubbing and evacuating the interior of the furnace growth chamber including the interior of the ampule through small vents are first used to purify the growth environment. The source materials are then epitaxially grown on the substrate at a high pressure within the ampule. The ampule may be repeatedly used without having to be destroyed after each growth.

Source: Google Patents

35 USC §181 Secrecy Order

Inventor

• 1HERBERT L. WILSON