Research/Patents/US 4731754
US 4731754Tier 3 — General Defense

ERASABLE OPTICAL MEMORY MATERIAL FROM A FERROELECTRIC POLYMER

Assignee

US Government

Filed as: UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY

Filed

Sep 12, 1985

Granted

Mar 15, 1988

Location

San Diego CA (SAIC/General Dynamics)

Abstract

An electro-optic memory effect providing for storing, erasing and rewritingigital information relies upon a ferroelectric polymer, polyvinylidene fluoride. Recent development of tri-fluoroethylene copolymers of this material with Curie temperatures below the melting point provides a means of selective writing, storage and erasure. The advantage of the polyvinylidene fluoride material for optical recording is its high chemical and physical stability. This material provides a mechanism for bit-by-bit erasure and long time storage of information.

Source: Google Patents

35 USC §181 Secrecy Order

Imposed

Apr 25, 1986

Rescinded

Oct 22, 1987

Duration

1 year, 6 months

Inventor

  • 1T. ROGER OGDEN

Sensitive facility: San Diego CA (SAIC/General Dynamics)

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Back to patent indexSource: USPTO 35 USC §181 secrecy order records