HIGH SPEED INGAASP LASERS BY GAIN ENHANCEMENT DOPING
Assignee
GTE LABORATORIES INCORPORATED A DE CORP
Filed
May 15, 1985
Granted
Nov 10, 1987
Location
NEWTON MA US
Abstract
A new method for increasing the modulation bandwidth of InGaAsP lasers is described herein. The method of the present invention is based on the gain enhancement doping of the lasers active layer. Lasers with highly doped active regions were demonstrated to have larger modulation bandwidths than lightly doped devices.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Oct 28, 1985
Rescinded
Mar 13, 1986
Duration
4 months
Inventor
- 1CHIN B. SU
Record Details
- Patent number
- US 4706253
- Application
- 06734131
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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