INFRARED SENSITIVE SILICON SUBSTRATE WITH INTEGRATED ELECTRONIC PROCESSING DEVICES AND METHOD FOR PRODUCING SAME
Assignee
LICENTIA PATENT-VERWALTUNGS-GMBH
Filed
Oct 6, 1981
Granted
Mar 24, 1987
Location
GERLENHOFEN DE
Abstract
An integrated circuit arrangement including an infrared sensitive silicon substrate having an epitaxial layer with integrated electronic processing devices applied to the major surface thereof, wherein the epitaxial layer is partially etched away to expose the detector region of the substrate. The exposed detector region is then connected to the processing devices by either a shallow diffusion or by other means. A method for producing such an arrangement, preferably using a crystal orientation dependent etching medium for etching the epitaxial layer, is also disclosed.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Jan 21, 1983
Rescinded
Dec 19, 1985
Duration
2 years, 11 months
Inventor
- 1PETER NOTHAFT
Record Details
- Patent number
- US 4652901
- Application
- 00634673
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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