RAPID ETCHING METHOD FOR SLICON BY SF6 GAS
Assignee
INTERNATIONAL BUSINESS MACHINES CORPORATION; A CORP.OF NY.
Filed
Mar 19, 1982
Granted
Oct 14, 1986
Location
LOS GATOS CA US
Abstract
A method of etching silicon with a laser at a very fast rate of the order of 45 microns/second includes the steps of providing an atmosphere of sulfur hexafluoride about the silicon and directing a continuous laser beam having a wavelength of about 0.6 or less microns at said silicon.
Source: Google Patents
35 USC §181 Secrecy Order
Imposed
Aug 11, 1982
Rescinded
Mar 13, 1986
Duration
3 years, 7 months
Inventor
- 1TUNG J. CHUANG
Record Details
- Patent number
- US 4617086
- Application
- 06360027
- Aerospace match
- Yes
- Dataset source
- 35 USC §181 SO records
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